InGaAs finFETs for future CMOS

The last few years have witnessed an explosion of interest in exploring the use of III-Vs to advance logic CMOS beyond the point of diminishing returns for silicon technology. There is now a tantalizing possibility that these compound semiconductors will enter the CMOS roadmap. If they do, the benefits could be huge – they could extend Moore’s Law by two or three more nodes, a huge contribution in itself, and they could also hold the key to revolutionary new technologies that are enabled by the integration of III-Vs on silicon. This combination could create systems that combine logic, terahertz sensing, imaging and communications, as well as optical functions.